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hexfet power mosfet notes through are on page 9 pqfn 5x6 mm features and benefits applications ? or-ing mosfet for 12v (typical) bus in-rush current ? synchronous mosfet for buck converters ? battery operated dc motor inverter mosfet features benefits absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @ t c(bottom) = 25c power dissipation linear derating factor w / c t j operating junction and t stg storage temperature range -55 to + 150 3.6 0.029 100 max. 32 100 400 20 30 26 100 v w a c low r dson ( .1 ) 1.) 100 0. ) ? 1

!" v ds 30 v r ds(on) max (@v gs = 10v) 2.1 m q g (typical) 29 nc r g (typical) 1.6 i d (@t c(bottom) = 25c) 100 a form quantity irfh5302trpbf pqfn 5mm x 6mm tape and reel 4000 irfh5302tr2pbf pqfn 5mm x 6mm tape and reel 400 eol notice #259 orderable part number package type standard pack note

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s d g thermal resistance parameter typ. max. units r ) ??? 1.2 r ) ??? 15 c/w r ??? 35 r 10) ??? 22 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . 0.0 ) 1. .1 . . ) 1. 1. . ) . .0 10 100 100 10 1 1 . . . . .1 1 ) 1 1 1. . ) 1 1 ) 1 00 0 0 avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 32 48 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 100 a a 100 ??? ??? 400 ??? ??? na ns pf nc conditions see fig.15 max. 130 50 ? = 1.0mhz v ds = 15v ??? conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 50a mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 50a v gs = 0v v ds = 15v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v v gs = 10v, v ds = 15v, i d = 50a t j = 25c, i f = 50a, v dd = 15v di/dt = 300a/ s t j = 25c, i s = 50a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 4.5v, i d = 50a v gs = 4.5v typ. ??? r g =1.8 1 0 0 1 a i d = 50a
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fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = 15v 60 s pulse width t j = 25c t j = 150c -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 50a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20406080 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 50a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c 2.5 v vgs top 10v 4.5v 3.8v 3.5v 3.3v 3.0v 2.8v bottom 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c 2.5 v vgs top 10v 4.5v 3.8v 3.5v 3.3v 3.0v 2.8v bottom 2.5v
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fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 3.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0a i d = 1.0ma i d = 250 a i d = 100 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec 25 50 75 100 125 150 t c , case temperature (c) 0 40 80 120 160 200 i d , d r a i n c u r r e n t ( a ) limited by package 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v

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fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 2 4 6 8 10 12 14 16 18 20 v gs , gate-to-source voltage (v) 1.0 2.0 3.0 4.0 5.0 6.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) t j = 25c t j = 125c i d = 50a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 8.7a 16a bottom 50a
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fig 16.

for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

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pqfn 5x6 outline "b" package details note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 5x6 part marking xxxx xywwx xxxxx international rectifier logo part number (?4 or 5 digits?) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-113 6: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
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pqfn tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ bo w p 1 ao ko code tape dimensions reel dimensions quadrant assignments for pin 1 orientation in tape dimens ion des ign to accommodate the component width dimens ion des ign to accommodate the component lenght dimens ion des ign to accommodate the component thicknes s pitch between s ucces s ive cavity centers over al l wi dth of the car r i er tape de s cr ipt ion type package 5 x 6 pqf n note: all dimens ion are nominal di ameter reel qty wi dth reel (mm) ao (mm) bo (mm) ko (mm) p1 (mm) w quadr ant pin 1 (inch) w1 (mm) 13 4000 12.4 6.300 5.300 1.20 8.00 12 q1
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qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.

repetitive rating; pulse width limited by max. junction temperature.
starting t j = 25c, l = 0.103mh, r g = 25 , i as = 50a.
pulse width 400 s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material.
calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test ca pability ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes pqfn 5mm x 6mm qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines ) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 3/10/2014 ? updated ordering information to reflect the end-of-life (eol) of the mini-reel option (eol notice #259). ? . 101 ? .

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